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Data Sheet
10V Drive Nch MOSFET
R8008ANX
? Structure
Silicon N-channel MOSFET
? Dimensions (Unit : mm)
TO-220FM
10.0
φ 3.2
4.5
2.8
? Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
(1) Gate
1.3
1.2
0.8
(2) Drain
2.54
2.54
0.75
2.6
? Application
Switching
(3) Source
(1) (2) (3)
? Packaging specifications
Package
Bulk
? Inner circuit
Type
Code
-
R8008ANX
Basic ordering unit (pieces)
500
?
(1) Gate
? 1
? Absolute maximum ratings (Ta = 25 ? C)
(2) Drain
(3) Source
(1)
(2)
? 1 BODY DIODE
(3)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
800
? 30
Unit
V
V
I DP
Drain current
Continuous
Pulsed
I D *3
*1
? 8
? 32
A
A
Source current
(Body Diode)
Continuous
Pulsed
I S
I SP
*3
*1
8
32
A
A
Avalanche current
I AS *2
4
A
Avalanche energy
E AS
*2
4.2
mJ
Power dissipation
Channel temperature
Range of storage temperature
P D *4
T ch
T stg
50
150
? 55 to ? 150
W
? C
? C
*1 Pw ? 10 ? s, Duty cycle ? 1%
*2 L
500 ? H, V DD =50V, R G =25 ? , T ch =25°C
*3 Limited only by maximum channel temperature allowed.
*4 T C =25°C
? Thermal resistance
Parameter
Channel to Case
Symbol
R th (ch-c)
Limits
2.5
Unit
? C / W
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
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